An Avalanche-Transit-Time (ATT) diode with lateral orientation has been designed. The proposed diode has a High-Electron-Mobility (HEM) active region that constitutes of 2-Dimensional-Electron-Gas (2DEG). For the first time ever, quasi-AlGaN barrier has been deployed to induce desired degree ofband-engineering in the device. Such barrier consists of successive AlN/GaNthin epitaxiallayers. So that the entire barrier behaves like a sustained quasi-AlGaN material. Within such quasi-material, polarization electric field and band mismatch create periodic perturbation. Again, band offset for such perturbed quasi-material barrier and the GaN active region results in the formation of high electron mobility 2DEG. Such 2DEG formation is further supported by the positively charged Cathode-Field-Plate (CFP) under reverse biased ATT operation condition. At the same time,the laterallyoriented device results in such 2DEG to exist precisely along the active region. Subsequently, the first ever two-terminal high-electron mobility ATT diodehaving 2DEG based active region comes into play. This design has rendered a third terminal or gate, as is necessary for high-electron-mobility-transistors, i.e. HEMTs, to be redundant. Electron mobility in such 2DEG transport region ~ (1600–2000)cm2/V-sec.Such mobility is twice that of standard alloy AlGaN material barrier and GaN well, where the mobility ~ 800cm2/V-sec. This in turn leads to high RF output power and exceptionally high DC to RF conversion efficiency. Optoelectronic performance of such device has been studied byan ingenious, experimentally-supported Strain-corrected-Mixed-Quantum-Tunneling-Drift–Diffusion (Sc-MQTDD) simulation model. Both single and array configurations of these ATT diodes have greatest documented efficiency of DC to RF conversion, i.e. 23% & 27%, and also RF output power, i.e. 980×109W/m2& 1163×109W/m2, respectively. Also, the interaction between photons in the UV region and carrier electrons has been studied.Responsivity in UV domain and quantum efficiency have been respectively predicted to be 0.7A/W and 80%, for 3 × 3 array. Subsequently, the scope of application of such cutting-edge device in bio-medical domain has been explored.
Chatterjee did her Ph.D. in Nano Science and Nano Technology, from University of Calcutta. She won many prestigious fellowships from Government Of India: CSIR-SRF, DST-INSPIRE, Indian Institute of Technology Fellowship ECE (I.I.T. Kharagpur). She did her M.Tech. in Radio Physics and Electronics from University of Calcutta, where she stood FIRST CLASS FIRST and was AWARDED THE GOLD MEDAL. She was awarded OUTSTANDING ACADEMIC EXCELLENCE AWARD. Shedid her M.Sc. with excellence in Electronic Science from University of Calcutta. She received NATIONAL MERIT scholarship from Government of India for her B.Sc. from University of Calcutta. She is Reviewerfor many esteemed international SCI journals. She has bagged various prestigious awards,Young-Achiever, Research-Excellence, Academic-Excellence, Global-Teaching-Excellence, Excellence-in-Review, etc.She has been invited and visited several times to UK, Italy, USA, Japan, Belgium etc. as an EXPERT and INVITED SPEAKER, both offline and online. She has 12 international SCI Journal papers: among them 10 high impact SCI Journals as First author, including severalIEEE Transactions. She has received several BEST PAPER AWARDS including Science-Congress (Govt.). She has 3international book chapters.
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